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| APTGT75TDU60PG Triple Dual Common Source Trench + Field Stop IGBT(R) Power Module C1 C3 C5 G1 G3 G5 VCES = 600V IC = 75A @ Tc = 80C Application * AC Switches * Switched Mode Power Supplies * Uninterruptible Power Supplies E5/E6 E1 E1/E2 E3 E3/E4 E5 E2 E4 E6 G2 C2 G4 C4 G6 C6 Features * Trench + Field Stop IGBT(R) Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated * Kelvin emitter for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Stable temperature behavior * Very rugged * Solderable terminals for easy PCB mounting * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Easy paralleling due to positive TC of VCEsat * Very low (12mm) profile * Each leg can be easily paralleled to achieve a dual common source configuration of three times the current capability * RoHS Compliant Max ratings 600 100 75 140 20 250 150A @ 550V Unit V A V W June 2006 1-5 APTGT75TDU60PG - Rev 1, C1 C3 C5 G1 E1/E2 E1 E2 G2 E3/E4 G3 E3 E4 G4 E5/E6 G5 E5 E6 G6 C2 C4 C6 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current TC = 25C TC = 80C TC = 25C TC = 25C TJ = 150C Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com APTGT75TDU60PG All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 75A Tj = 150C VGE = VCE, IC = 600A VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 600 Unit A V V nA 5.0 Dynamic Characteristics Symbol Characteristic Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGE = 0V VCE = 25V f = 1MHz Inductive Switching (25C) VGE = 15V VBus = 300V IC = 75A R G = 4.7 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 75A R G = 4.7 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 75A Tj = 25C R G = 4.7 Tj = 150C Min Typ 4620 300 140 110 45 200 40 120 50 250 60 0.35 0.6 2.2 2.6 Max Unit pF ns ns mJ mJ Reverse diode ratings and characteristics Symbol Characteristic VRRM IRM IF VF trr Qrr Er Maximum Peak Repetitive Reverse Voltage Test Conditions Tj = 25C Tj = 150C Tc = 80C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C Tj = 150C Min 600 Typ Max 250 500 Unit V A A Maximum Reverse Leakage Current DC Forward current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy VR=600V IF = 75A VGE = 0V IF = 75A VR = 300V di/dt =2000A/s mJ www.microsemi.com 2-5 APTGT75TDU60PG - Rev 1, 75 1.6 1.5 100 150 3.6 7.6 0.85 1.8 2 V June 2006 ns C APTGT75TDU60PG Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 3 Min Typ Max 0.60 0.98 175 125 100 5 250 Unit C/W V C N.m g RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz To heatsink M6 SP6-P Package outline (dimensions in mm) 5 places (3:1) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGT75TDU60PG - Rev 1, June 2006 APTGT75TDU60PG Typical Performance Curve 150 125 TJ =125C Output Characteristics (VGE=15V) T J=25C Output Characteristics 150 TJ = 150C VGE=19V 125 T J=150C IC (A) 100 75 50 25 0 0 0.5 1 T J=25C 100 IC (A) 75 50 VGE=13V VGE=15V VGE =9V 25 0 1.5 VCE (V) 2 2.5 3 0 0.5 1 1.5 2 VCE (V) 2.5 3 3.5 150 125 100 75 50 25 Transfert Characteristics 5 T J=25C Energy losses vs Collector Current VCE = 300V VGE = 15V RG = 4.7 TJ = 150C Eoff 4 E (mJ) 3 2 IC (A) Er Eon TJ=150C TJ=125C T J=25C 1 0 11 12 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175 Eoff 0 5 6 7 8 9 10 VGE (V) Switching Energy Losses vs Gate Resistance 5 4 E (mJ) 3 2 1 Eon Er VCE = 300V VGE =15V IC = 75A T J = 150C 100 125 150 150 125 IC (A) 100 75 50 25 0 35 40 0 VGE =15V TJ =150C RG=4.7 Eon 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 100 200 300 400 VCE (V) 500 600 700 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.7 Thermal Impedance (C/W) 0.6 0.5 0.4 0.3 0.2 0.1 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration in Seconds 1 10 0.9 0.7 0.5 IGBT 0.05 0 0.00001 www.microsemi.com 4-5 APTGT75TDU60PG - Rev 1, June 2006 APTGT75TDU60PG Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 120 100 80 60 40 20 0 0 20 40 IC (A) 60 80 100 Hard switching ZVS VCE=300V D=50% RG=4.7 TJ =150C Tc=85C ZCS Forward Characteristic of diode 150 125 100 IF (A) 75 50 25 TJ=25C T J=125C TJ =150C 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 1.2 Thermal Impedance (C/W) Diode 1 0.8 0.6 0.4 0.2 0 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10 0.00001 Rectangular Pulse Duration in Seconds Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT75TDU60PG - Rev 1, Microsemi reserves the right to change, without notice, the specifications and information contained herein June 2006 |
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